Papers by Keyword: Sidewall Polymer

Abstract: A wet cleaning formulation with tunable AlN etch rate approach was developed. The formula is compatible with Cu, Co and low-k materials, is able to remove etch residues and does not contain fluoride.

Abstract: TiN metal hardmask has been used to improve etch selectivity to low-k materials and thereby gain better profile control. For 14 nm and smaller technology nodes, it is required that the TiN hardmask is completely removed in order to improve the aspect ratio for subsequent reliable metal deposition. Thus, a chemical cleaning formulation with high TiN etch selectivity toward Cu and low-k is required.

Abstract: A novel wet cleaning formulation approach was developed with a TiN etch rate of more than 30 Å/min at room temperature and more than 100 Å/min at 50°C. The chemicals are compatible with Cu and low-k materials, and are suitable for Cu dual damascene interconnect 28 nm and smaller technology node applications. The chemicals offer a route to in situ controlled TiN pullback or even complete removal of the TiN mask during the cleaning process in single wafer tool applications. The chemicals do not contain NH₄OH or TMAH and so are very user-friendly.