Papers by Keyword: Site Competition

Abstract: This study investigates the multifaceted relationships between key process parameters such as C/Si ratio, system pressure, temperature, and growth rate and their effects on nitrogen dopant incorporation in homoepitaxial layers on 4H-SiC substrates. We focus on understanding how these growth parameters influence the in situ nitrogen incorporation during chemical vapor deposition (CVD) of epitaxial layers on 150 mm commercially available SiC substrates. Through a carefully designed experimental framework, which explores the interactions between each parameter and the C/Si ratio, we have shed light on a refined approach for epitaxial growth. This approach may not only stabilize the nitrogen dopant concentration across the wafer but possibly also reduces the formation of epitaxial defects.

Abstract: After presenting an exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3CSiC films grown by chemical vapor deposition (CVD), we focalize once more on what is called site competition effects. We observed that the influence of C/Si ratio on dopant (Al, N) incorporation in SiC was qualitatively different depending on whether the growth experiments were performed in “low temperature” (LT) or “high temperature” (HT) regime. Partial explanation of observed phenomena basing on thermal evolution of carbon coverage of SiC surface is proposed.

Abstract: An exhaustive experimental study of the influence of C/Si ratio on voluntary incorporation of nitrogen (N) and aluminum (Al) in 4H-SiC thin films is presented. The films were grown by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor on Si- and C-face substrates, under Si-rich and C-rich conditions. Under some conditions the observed variation of dopant incorporation with C/Si ratio could be clearly attributed to the site competition effects, while in several cases other mechanisms have to be taken into account.