Papers by Keyword: Spinel Particle

Abstract: ZnO varistors of the excellent tolerance characteristics for electrical degradation were made by adding Bi2O3-MnO2-Co3O4-Cr2O3-SiO2-Sb2O3-NiO in ZnO. The tolerance characteristics for electrical degradation were evaluated by changing amount of ZrO2-additive. The evaluation methods are voltage-current characteristics, X-ray diffraction, scanning electron microscope, and energy dispersion X-ray spectroscopy. Monoclinic and tetragonal ZrO2 and the compounds originated in Zr were observed at both grain boundaries and triple points. Moreover, the compounds originated in both Zr and Sb improved the tolerance characteristics for electrical degradation. On the other hand, especially monoclinic ZrO2 deteriorated the tolerance characteristics for electrical degradation. It is one key factor of the improvements of the tolerance characteristics for electrical degradation that the mobility of oxide ions or interstitial Zn2+ ions was hindered by forming the compounds contained Zr, Sb, Si, and, Bi atoms.

Abstract: The effects of the thermally annealing of Bi-Mn-Co-Sb2O3-added ZnO varistors on their electrical degradation were investigated. For the samples with 0.01mol% Sb2O3added and without Sb2O3, no marked difference in the non linearity index of the voltage-current (V-I) characteristics was observed upon electrical degradation for the annealed and nonannealed samples. Upon increasing the amount of Sb2O3 added, the values of  increased after electrical degradation for the annealed samples. Moreover, the value of  after electrical degradation was proportional to the full width at half maximum (FWHM) of the X-ray diffraction peak for Zn2.33Sb0.67O4-type spinel particles under various annealing conditions. The added Sb2O3 did not dissolve in the ZnO grains but became segregated at grain boundaries. Therefore, it is speculated that the increase in the FWHM for the spinel particles is due to the increase in the numbers of fine spinel particles at grain boundaries and triple points.