Papers by Keyword: Stress-Relaxation

Abstract: Stress-relaxation method was first used by Liu and Jonas in 1980s for following the kinetics of strain induced precipitation of carbonitrides in austenite. Since then, the method has been widely employed for studying not only the precipitation kinetics but also the recovery and recrystallization processes in steels and other alloys. In the present paper, the principle and the worldwide usage of the method were reviewed. The dependence of stress relaxation rate on the occurrence of precipitation, recovery and recrystallization was interpreted based on a dislocation model. The capabilities and the limitations of the method were discussed and ways to overcome the existing limitations were also proposed.

Abstract: The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation.