Papers by Keyword: TFTs

Abstract: Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced.

Abstract: Ion shower doping with a main ion source of P2Hx using a source gas mixture of PH3/H2 was conducted on excimer-laser-annealed (ELA) poly-Si. The amount of as-implanted damage was observed to increase with acceleration voltage. The measured values of as-implanted damage using a UV-transmittance was found to correlate well with the ones calculated using TRIM-code simulation. After activation annealing the sheet resistance generally decreases as the acceleration voltage increases. It, however, increases as the acceleration voltage increases under the conditions of severe doping and low temperature annealing. Results of UV-transmission Spectroscopy and Hall measurements revealed that uncured damage seems to be responsible for the rise in sheet resistance.