Papers by Keyword: TaN

Abstract: A post-etch residue cleaning formulation, based on balancing the aggressiveness of hydrofluoric acid with its well-known residue removal properties is introduced. In a series of investigations originally motivated by the cleaning challenge provided by high-k dielectric-based residues, a formulation platform is developed that successfully cleans residues resulting from the plasma patterning of tantalum oxide and similar materials while maintaining metal and dielectric compatibility. It is further shown that the fundamental advantages of this solution can be extended to the cleaning of other, more traditional post-etch residues, with no sacrifice in compatibility, as demonstrated by measurements on blanket films and through SEM data.

Abstract: Tantalum nitride (TaN) thin films were deposited using magnetron sputtering method under different N₂/Ar ratio condition. Slow positron beam was used to analyze the microstructure of those films. The results show that the films which deposited at low N₂/Ar flow ratio contain more vacancy-like defects, and the corresponding S parameter is relatively large. The sheet resistance measurement displays that ohms-per-square greatly increase with increased N₂/Ar ratio. And the reasons could be related to nonstoichiometry-induced vacancies and lattice distortions.

Abstract: The high dielectric permittivity of Y₂NiMnO₆ ceramics were measured by Agilent E4294A (Impedance Measurement) range of frequency 100 to 10 MHz in this research. In this sample ceramics, passing by a sintering temperature of 1400°C at 6 hours to 24 hours. The phase and microstructure of the deposited materials were investigated as a function of sintering temperature, using X-ray diffraction (XRD) and scanning electron microscopy (SEM). We found that the dielectric properties are very sensitive to the several sintered follow by time, and high temperature can be related to the change ordering of Ni²⁺ and Mn⁴⁺ ions.

Abstract: Technologies of TaN thin-film resistors were studied, the thin films were prepared by the D.C. sputtering system, and the trimming methods of the resistor were anodic oxidation and autoxidation. We laid emphasis on the study of power capability of TaN thin film resistor in this paper. We acquired the resistors with the average power capability of 13W/mm².

Abstract: Tantalum (Ta) can be use a suture for operation and implant material in order not to react with body fluid and stimulate a human body. In this study, the stable oxide of a tantalum, tantalum oxide layer produced by oxidation of the tantalum nitride, TaN powders by high temperature oxidation were investigated in order to determine the possibility of its a distributed aid for biomaterial composite such as an artificial root etc. The sample, TaN powder oxidized at high temperature exhibited a steady mass gain with increasing oxidation temperature. Based on the results of the XRD, tantalum oxide, Ta2O5 was detected on the samples. It is considered, the TaN showed a good oxidation film produced by high temperature oxidation.

Abstract: In this work, CMOS compatible MEMs based bolometer process was developed on 200mm std CMOS Cu BEOL. As to the micro-bridge structure, TaN was used as electrode material, and alpha-Si film was used as the sacrificial material fabricated by low Temperature PECVD technology. No metal or dielectric material plug was used for the anchor supporting structure, which make the process much more controllable and flexible. For one of the Sensor product application, B-doped alpha-Si film was used as sensing material fabricated by PECVD and in situ doping process. The sensing resistor, which is the most important structure of this product, was fabricated with different approaches. In the top electrode scheme, TaN was used as electrode layer on top of sensing material whose pattern was to define the sensing resistor. In the bottom electrode scheme, TaN electrode layer was located on bottom of sensing material. The two schemes were comparatively studied to show their advantages and drawbacks. Conclusion was made that both the scheme can match the product requirements, and bottom electrode scheme was the better choice for its well control for sensing material loss and uniformity of sensing resistor, which was most important to the performance and yield of MEMs based IR sensor products.

Abstract: The paper investigates kinds of classical Bayes classification arithmetic and summarizes their advantage and disadvantage, then introduces an improved weighted mixed Bayes classification model. It divides attribute sets into several subsets theorem. The subsets are trained by TAN (Tree Augmented Naive Bayes) and the results are integrated by weighted formula. At the same, the paper introduced a new method to compute the weights of attribute subsets. Finally, Experimental results show that this model has higher classification accuracy and practicability．

Abstract: The glass molding process provides great potential for mass production of precise glass optical components at low cost. The key issue for achieving a low production cost is to extend the service life of the expensive mold inserts. The precious metal based alloy is one of the coating materials for the molds which provides excellent glass anti-sticking results. However, the inter-diffusion between the WC/Co mold materials and precious metal coatings will deteriorate the coatings which needs to be resolved. It is essentially to deposit an interlayer as the diffusion barrier to improve the inter-diffusion problem. A thin layer of TaN was deposited on the WC/Co substrate as the diffusion barrier using a magnetron sputtering system, and followed by the deposition of Pt-Ir layer as the protective layer. Low Tg Glass gobs (L-BAL 42) were placed on the coated substrate to investigate inter-diffusion between the substrate and coating at high temperature. The surface interaction between the glass gobs and protective coatings was also examined. The obtained TaN and Pt-Ir multilayer had a dense nano-crystalline structure. High temperature wetting tests showed that the TaN film could effectively resist the cobalt and tungsten diffusion into the precious metal protective layer and, as a result, minimized the possibility of oxidation and interaction between glass and protective coating. The coated substrates retained a good surface finish and the glass gobs stayed fully transparent after 6 hours reaction test at 700°C.

Abstract: One major problem when operating SiC power devices at a junction temperature of more than 200°C is the pronounced degradation of the Ni2Si-based ohmic contacts caused by interaction with the Al interconnect. In this paper, measures against such trouble and their effectiveness are discussed. Two measures highly compatible with Si device technology have been devised and experimentally implemented: (1) insertion of a Ta/TaN barrier metal between the Al interconnect and the Ni2Si contacts; (2) use of 1 wt% Si-doped Al as the interconnect. A failure lifetime of more than 12000 hours has been attained in a temperature range up to 385°C.