Papers by Keyword: Transversal Kerr Effect

Abstract: The research of magneto-optical properties has been conducted for the “Nanocomposite-bismuth telluride” (Co₄₀Fe₄₀B₂₀)_33.9(SiO₂)_66.1/[Te₃Bi₂] multilayer system at various thicknesses of each layer type. We report an enormous enhancement of magneto-optical (MO) response in this system. Besides, a good correlation between thickness dependences of transversal Kerr effect (TKE) and magneto-transport properties has been established. Such correlation was related to peculiarities of the interface forming process at the ferromagnetic (FM) granule boundaries. Moreover, this amplification of magneto-optical response is largest among the other spacer layers, such as Si, Cu, and C, therefore a comparison between them has been plotted.

Abstract: t is reported about fabrication by laser deposition in a gaseous environment of epitaxial layers of ferromagnetic semiconductors GaMnSb and InMnSb. Investigations of x-ray diffraction and Raman scattering showed reasonably good crystal quality of GaMnSb and InMnSb layers. Magnetic properties were investigated by magneto-optical transversal Kerr effect and Hall effect. It is established, that GaMnSb layers are ferromagnetic at room temperature. In contrast, InMnSb samples demonstrate the ferromagnetic properties only at low temperatures (< 70 K).

Abstract: Optical and magneto-optical properties of GaMnSb layers fabricated on GaAs (001) substrates by laser ablation technique were studied using spectral ellipsometry (E =1.24-3.25 eV) and the transversal Kerr effect (TKE) (E = 0.5 4.2 eV) as well as atomic and magnetic force microscopy. Spectra of the constituents of the diagonal components of the permittivity tensor as well as TKE depended substantially on the layer fabrication conditions. At room temperature a strong resonant band was observed in the TKE spectra for the GaMnSb layers with low Mn content in the energy range E 0.5-1.5 eV. This resonant TKE band was explained by excitation of surface plasmons in MnSb nanoclusters, which arose during the growth of the layers. In the energy region E >1.5 eV the TKE spectra were related to interband transitions in MnSb inclusions.

Abstract: Optical and magneto-optical properties of In(Ga)MnAs layers fabricated by laser ablation on GaAs(100) substrates were studied. Spectra of the optical constants and the transversal Kerr effect (TKE) depended substantially on the conditions of layer fabrication and testified to the presence of MnAs inclusions in all the samples. The cross-sectional transmission electron microscopy revealed the presence in the layers of inclusions 10-40 nm in size. At room temperature, a strong resonant band was observed in the TKE spectra of some In(Ga)MnAs layers in the energy range 0.5-2.7 eV. The resonant character of the TKE spectra was explained by excitation of surface plasmons in the MnAs nanoclusters embedded in the semiconductor host.