Papers by Keyword: Vias

Abstract: For advanced technology nodes TiN hard mask integration into Cu/low-k via/trench DD process requires the mask to be fully stripped after DD etching. The one-step H₂O₂ containing wet chemical clean aiming to removing TiN mask often failed to simultaneously clean etch residue. We developed more reliable two-step wet chemical process combining a solvent-based post-etch residue clean followed by a solvent/H₂O₂ mixture strip for TiN mask removal. Bath lifetime optimization was also demonstrated.

Abstract: A simple technique to reduce the lateral size of the wide-band planar spiral antenna is presented. It is implemented by dividing the conventional spiral patch into a different number of segments and placing them on different sides of the microwave substrate with vias as the connections. Two rectangle spiral shaped planar spiral antennas were fabricated and measured to demonstrate the capability of lowering the initial resonant frequency by adding connecting vias. According to results, the initial resonant frequency of the proposed antenna has been shifted from 2.4GHz to 1.6GHz; in other words, the antenna size can be reduced to 56%, approximately

Abstract: A Post-Etch-Residue (PER) removal process for tank and spray tools has been developed using a new inorganic aqueous based chemistry. The performance of this new type of polymer remover, Inosolv 400 Fotopur®, on process wafers is compared with other inorganic chemistries such as DSP (Dilute Sulphuric acid hydrogen Peroxide) and DSP+, containing traces of HF. Inosolv 400 Fotopur® has improved polymer removal capabilities. Furthermore Inosolv 400 Fotopur® does not show any attack of the metal or dielectric layers and is inorganic based and thus environmentally friendly.