Papers by Keyword: V_th

Abstract: We report an AEC-Q101-qualified 750V, 15 mΩ planar SiC MOSFETs with a long short circuit withstand time (SCWT) of > 9μs at V_DS=400V and V_GS=15V and a low specific on-resistance (R_ON,SP) of 2.1 mΩ.cm² at V_GS=15V designed for xEV traction inverter applications. The R_DS(on) at V_GS=15V increases from 15mΩ at 25 °C to 21 mΩ at 175 °C. A low turn-on (E_ON) and turn-off (E_OFF) switching energy loss of 95.5μJ and 67μJ at I_DS=75A, V_DS=400V was measured at 25 °C. The gate oxide lifetime at worst case operating fields of 5MV/cm is >> 20 years.

Abstract: Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 400 V Planar type, and design the trench type for realization of low on-resistance. Trench Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.