Papers by Keyword: XBIC

Abstract: A comparative study of multicrystalline Si based solar cells and plastically deformed single crystalline Si by the EBIC, LBIC and XBIC methods as well as a computer simulation were carried out. The XBIC measurements were realized on a laboratory X-ray source. Simulations of LBIC and XBIC contrast values for grain boundaries, dislocations and spherical precipitates were carried out for different diffusion length and beam diameter values. It is shown by a computer simulation that the LBIC and XBIC contrast of two-dimensional defects in the crystals with a large enough diffusion length can be a few times higher than that in the EBIC mode, i.e. these methods in recent multicrystalline Si structures allow to reveal grain boundaries with the lower recombination strength. The contrast of dislocations perpendicular to the surface can be comparable in all three methods. The XBIC and LBIC contrast of precipitates usually is essentially smaller than that in the EBIC mode and could approach it in the structures with the small diffusion length only. Experimental data confirming the results of simulations are presented.

Abstract: It is shown that the X-ray beam induced current method (XBIC) can be realized at the laboratory X-ray source using the polycapillary x-ray optics. The images of iron contaminated grain boundaries in multicrystalline Si are obtained. It is shown that the grain boundary XBIC contrast is 2-3 times smaller than the EBIC one. A simulation of XBIC and EBIC contrast values for two-dimensional defects is carried out and a good correlation between the experimental and calculated values is obtained. The dependence of grain boundary XBIC contrast on the X-ray beam width is calculated.

Abstract: Simulation of contrast for small spherical defects in the X-ray beam-induced current (XBIC) mode has been carried out. Under simulations the excess carrier generation function is described by the rigid cylinder with the constant generation rate inside it. The dependence of maximum contrast value on the precipitate depth, diffusion length and effective beam radius is calculated. The XBIC contrast profile as a function of diffusion length, of beam radius and of precipitate depth has been calculated that allows to evaluate the spatial resolution of the technique. The results obtained are compared with those calculated for the EBIC contrast of the same defect. It is shown that in the semiconductor materials with the small diffusion length the XBIC contrast could be comparable with the EBIC one.