Papers by Keyword: ZnTe

Abstract: ZnTe solar cells with homojunction and heterojunction structures have been developed. Homojunction was fabricated by thermal diffusion of Al into p-ZnTe, and the effect of the diffusion temperature on the photovoltaic (PV) properties was investigated. The highest efficiency was obtained by lowering the diffusion temperature and using p-ZnTe substrate with a low hole concentration. For the heterojunction solar cell, n-ZnO/i-ZnTe/p-ZnTe structure was fabricated, and PV properties were characterized.

Abstract: Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10^-3 lines-m² and 1.639×10¹⁵ lines/m²respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

Abstract: To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is a better choice prior to the final metallization for contact. Among many investigated back contact materials the ZnTe is suitable as a buffer layer. ZnTe thin films were deposited onto glass substrates by the thermal evaporation technique under vacuum ~2×10-5mbar. Undoped ZnTe thin films are highly resistive, extrinsic doping of Cu was made to improve the electrical conductivity. Films were doped by immersing in Cu N_O32.5H2O solutions for Cu doping. To optimize the growth parameters the prepared films were characterized using various techniques. The structural analysis of these films was performed by X-ray diffraction (XRD) technique and optical transmission. X-ray diffraction identified the phases present in these films and also observed that the prepared films were polycrystalline. Also the spectral dependence of absorption coefficient was determined from spectrophotometer. Energy band gap index were calculated from obtained optical measurements data.

Abstract: Electrodeposition of ZnTe thin films by controlled potential method from aqueous solutions on ITO were done to investigate characteristics suitable as a window material in solar cells technology. The influence deposition of potential towards the Zn:Te ratio and the crystallinity are discussed. The electrodeposited films were investigated by using X-Ray Diffraction and Energy Dispersive Analysis of X-Ray. The Te content decreases at higher deposition potentials.

Abstract: ZnTe compound semiconductors were synthesized in acidic aqueous solution using a pulsed current electrodeposition technique. The optimum condition to obtain ZnTe deposits was determined by the cathodic polarization curves measured at a wide potential range. During the co-deposition of Zn and Te, under potential deposition (UPD) of Zn was observed. Increasing the solution temperature up to 353 K, UPD of Zn was promoted by the formation of Zn(OH)2. Crystal phase, structure and chemical composition of electrodeposited ZnTe was controlled by the solution composition and electrolysis condition. The band gap energy of ZnTe films annealed at 573 K was close to 2.26 eV.