Papers by Keyword: ZrO₂ Thin films

Abstract: This study investigated the correlation between the oxygen-argon ratio and crystal phase, the surface flatness and electrical properties of ZrO₂ thin films The films were deposited on transparent conductive indium tin oxide (ITO) substrates by DC magnetron sputtering. ZrO₂ films exhibit ZrO cubic and ZrO₂ monoclinic mixed phases when deposited with a low oxygen-argon ratio of 5:45. As the oxygen-argon ratio increases, a gradual phase transition ZrO to orthorhombic ZrO₂ occurs. Besides, the ZrO₂ film deposited with an oxygen-argon ratio of 10:40 exhibits highest resistance to electric field strength, and lowest leakage current.

Abstract: A new photochromic ZrO2 precursor solution was prepared using zirconium tetra-n-butoxide, 4-(phenylazo)benzoic acid and ethyleneglycol monomethylether. The density functional theory (DFT) calculation has identified that the structure of the synthesized precursor molecule changed by UV irradiation. The two kinds of thin films were prepared using the photosensitive ZrO2 precursor solution without and with UV irradiation. The surface morphology of thin films changed by UV irradiation. It was found that the surface morphology of thin films is controlled by the difference of precursor structure introduced by UV irradiation.