Papers by Keyword: g-Factor

Abstract: In the present work the possibility of simultaneous localization of two electrons in Δ¹⁰⁰ and Δ⁰⁰¹ valleys in ordered structures with Ge/Si quantum dots (QD) was verified experimentally by electron spin resonance (ESR) method. ESR spectra obtained for the ordered ten-layered QD structure in the dark shows the signal corresponding to electron localization in Si at the Ge QD base edges, in Δ¹⁰⁰, Δ⁰¹⁰ valleys (g_zz=1.9985, g_in-plane=1.999). Light illumination causes the appearance of a new ESR line (g_zz=1.999) attributed to the electrons in Δ⁰⁰¹ valley localized at the QD apexes. Observed effect is explained by enhancement of electron confienment near QD apex by Coloumb attraction to the photogenerated hole trapped in Ge QD.

Abstract: Review of the widely known isotope separation techniques where the isotope effect is caused by electron interactions is presented in this paper. An assumption that isotope effects are based on spin interactions can be made.

Abstract: The structural and magnetic properties as well as the electron paramagnetic resonance in Pb1-xVxTe (х0.7 at.%) solid solutions have been investigated. It was found that the magnetic field and the temperature dependences of magnetization have a paramagnetic character, connected obviously with the paramagnetic contribution of vanadium impurity isolated ions. Electron paramagnetic resonance spectra were measured and the temperature dependence of the g-factor in the temperature range 85-200 K was obtained.

Abstract: Incorporating diluted magnetic semiconductor (DMS) layers within barrier devices offers new device design potential. To study these devices we have generalized an existing time dependent transient algorithm that couples the Wigner transport equation to Poisson’s equation and an external circuit. For electron transport we have studied alterations in the dc and time dependent behavior of resonant tunneling diodes with DMS barriers and wells, have transformed a single barrier structure into a double barrier structure and examined the increased functionality of the devices. We present new results, including some preliminary calculations incorporating holes, discuss transients and the potential role that DMS layers will play in controlling the transient operation of superlattice structures.