Papers by Keyword: n-Channel MOS IC

Abstract: This paper pertains to development of high temperature capable digital integrated circuits in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology. Among the circuits developed in this work are data latch, flip flops, 4-bit shift register and ripple counter. All circuits are functional from room temperature up to 300C without any notable degradation in performance at elevated temperature. The 4-bit counter demonstrated stable behavior for over 500 hours of continuous operation at 300C.