Papers by Keyword: β-Ga₂O₃

Abstract: Electrical properties of Schottky contacts of high work-function metals (Pd, Au, and Ni) on (010) and (201) oriented β-Ga₂O₃ were investigated. Current-voltage characteristics reveal that all the contacts exhibit high rectifying behavior with ideality factors as low as 1.04. However, the reverse leakage currents were lower in the (010) samples compared to the (201) ones. Thermal admittance spectroscopy confirms a main charge carrier level to be at ~0.15 eV below the conduction band edge (E_c). Secondary ion mass spectrometry indicates that Si may be responsible for this donor level. Deep level transient spectroscopy reveals four levels (E1-E4) in the upper part of the band gap, with the corresponding energy level positions at 0.56, 0.76, 1.01, and 1.48 eV below E_c.

Abstract: Fe₂O₃/Ga₂O₃ composite and GaFeO₃ electrodes worked as rechargeable electrode materials for lithium-ion batteries, whereas their capacities were gradually decreased with increasing of cycle number. The initial Li insertion capacities (cut-off voltage: 0.01 V) were 1643 mAh/g for Fe₂O₃/Ga₂O₃ composite and 1196 mAh/g for GaFeO₃, respectively. Despite same Fe/Ga atomic ratio, Fe₂O₃/Ga₂O₃ composite showed a higher capacity than that of GaFeO₃ over the 50 cycles.

Abstract: High-quality β-Ga2O3 films andβ-Ga2O3 /ZnO/β-Ga2O3 nano composite thin films were fabricated on the sapphire substrates in the high vacuum atmosphere by laser molecular beam epitaxy (LMBE). The lattice structure and optical properties of these films were characterized.With the increase of the sputtering time of ZnO target ,Photoluminescence spectrums and Raman spectrums of the β-Ga2O3 /ZnO/β-Ga2O3 nano composite films were shifted regularly . When the ZnO target was sputtered 30min , the stronggest peak of Raman spectrum was appeared at 267nm . Besides,the composition ofβ-Ga2O3 /ZnO/β-Ga2O3 nano composite film was described .