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Optical Relaxation Processes of Phosphorescent Ir(ppy)3 Molecule in the Organic Light Emitting Diodes with High Quantum Efficiency
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Optimization of InGaN Based Light Emitting Diodes
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Optimization of InGaN Based Light Emitting Diodes

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Abstract:

The performance of InGaN quantum well based Light Emitting Diodes; (LEDs) had been numerically investigated by using standard industrial software, Silvaco. In this work, we found that InGaN single quantum well (SQW) LEDs gives better performance than InGaN triple quantum wells LEDs. The simulation results suggest that the inhomogeneity of electron and hole distributions in quantum wells active region plays an important role in the LEDs performance. The threshold current per μm also increases as the number of quantum well is increased.

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Periodical:

Materials Science Forum (Volume 517)

Pages:

195-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.517.195

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Online since:

June 2006

Authors:

N. Zainal, Abu Hassan Haslan, Hassan Zainuriah, Md. Roslan Hashim, Naser Mahmoud Ahmed

Keywords:

AlGaN, Gallium Nitride (GaN), InGaN, Light Emitting Diode (LED), Quantum Well

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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