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The Study of Thermal Treatment on Electrical Properties at Cr/p-GaN

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Abstract:

The barrier height of as-deposited Cr contacts was found to be ΦB= 0.87eV with the ideality of η=1.51 and remained almost unchanged after further annealing at 500 oC for 5 minutes. The barrier height of diodes were increased drastically after annealed at 600 oC where ΦB=1.01eV with η=1.69. Upon annealing at 700 oC for 5 minutes, the ΦB decreased to 0.61eV and the Cr diodes were degraded for higher temperature in this annealing duration. The ΦB remained in 0.80- 0.90eV respectively at 800 oC for 2 minutes and 900-1000 oC for 1 minute.

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Periodical:

Materials Science Forum (Volume 517)

Pages:

247-251

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.517.247

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Online since:

June 2006

Authors:

C.K. Tan, Azlan Abdul Aziz, Hassan Zainuriah, F.K. Yam, C.W. Lim, A.Y. Hudeish

Keywords:

Current-Voltage-Temperature (I-V-T) Measurement, P-Type Gallium Nitride GaN, Schottky Barrier Height SBH

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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