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Design of DBR Mirrors for GaN Vertical Cavity Surface Emitting Laser

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Abstract:

In the fabrication of nitride-based laser, the cavity plays a vital role in order to enhance the fundamental modes while suppressing the higher order modes. The critical problem faced between the designer and the grower is the idealistic approach in the design laboratory, which more often cannot be met in the fabrication lines. This is because the design does not take into account the limitation in the growth chamber in achieving the targeted mirror thickness and material composition. This paper discusses methods of designing DBR mirrors for vertical cavity surface emitting GaN based lasers. Our design considers variance in the thickness and material composition of the mirrors. The simulation results are given for the investigation of several properties of DBR mirror, as well as a comparison of same types of symmetric DBR mirror.

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Periodical:

Materials Science Forum (Volume 517)

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.517.25

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Online since:

June 2006

Authors:

Naser Mahmoud Ahmed, Md. Roslan Hashim, Hassan Zainuriah

Keywords:

DBR, Multilayer Mirrors, Transfer Matrix Method (TMM)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] K.W. Chow, M.H. Crawford, K.L. Lear, and G.R. Hadley, IEEE J. Quant. Electron QE 33(1997), p.1810.

Google Scholar

[2] J.L. Jewell, J.P. Harbison, A. Scherer, Y.H. Lee and L.T. Florez, IEEE J. Quant. Electron. QE 27 (1991), p.1332.

Google Scholar

[3] WWW-ocs. colorado. edu/SimWindows/simwin. html(current Mar. 20, 2003).

Google Scholar

[4] K. D. Choquette and H. Q. Hou, Proceedings of the IEEE, 85(1994), p.1730.

Google Scholar

[5] WWW. lasercomponents. de/wwwe/news/vcsel. htm (current Mar. 20, 2000).

Google Scholar

[6] H. A. Macleod, Thin-Film Opitcal Filters, (Adam Hilger Ltd. Bristol, 1986).

Google Scholar

[7] J.A. Dobrowolski Optics and Photonics News, 8(6)(1997), p.24.

Google Scholar

[8] P. Makowiak and W. Nakwaski, J. Physics D: Appl. Physics 31, (1998), p.2479.

Google Scholar

[9] H. M. Ng and T. D. Moustakas, Appl. Phys. Lett. 76(2000), p.2818.

Google Scholar

[10] F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, and A. Vasson, Phys. Stat. Sol. (a) 183(2001), p.163.

DOI: 10.1002/1521-396x(200101)183:1<163::aid-pssa163>3.0.co;2-0

Google Scholar

[11] S. H. Brewer, S. Franzen, Journal of Alloys and Compounds 338, (2002), p.73.

Google Scholar

[12] K. Neyts, P. De-Visschere, D. K Fork and G. B Anderson. Journal of the Optical Society of America-B- (Optical-Physics). Vol. 17 (1)( 2000), p.114.

Google Scholar

[13] H.M. Ng, D. Doppalapudi, E. Iliopoulos, and T.D. Moustakas Appl. Phys. Lett. vol 74(7), (1999), p.1036.

Google Scholar

[14] J. Piprek, R. Kehl Sink , M. A. Hansen , J. E. Bowers , and S. P. Denbaars SPIE Proc. (2000), p.3944.

Google Scholar

[15] S Fernández, F. B. Naranjo, F. Calle, M. A. Sáncheía, E. Calleja, P. Vennegues, A. Trampert and K. H. Ploog, Semicond. Sci. Technol. 16 (2001), p.913.

DOI: 10.1088/0268-1242/16/11/305

Google Scholar

[16] K. E. Waldrip, J. Han, J. J. Figiel, H. Zhou, E. Makarona, and A. V. Nurmikko, Appl. Phys. Lett. Vol 78(21)(2001), p.3205.

DOI: 10.1063/1.1371240

Google Scholar

[17] H. P. D. Schenk et al, Appl. Phys. Lett. 80(2002), p.174.

Google Scholar

[18] F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano, Appl. Phys. Lett. 82(2003), p.868.

DOI: 10.1063/1.1539297

Google Scholar