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Pinning Fermi Level of p-GaN due to Three Different (Zr, Ti, and Cr) Metal Contact

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Abstract:

The Current-Voltage-Temperature (I-V-T) characteristics of single layer deposition, consisting of Zr, Ti, or Cr/p-GaN Schottky diodes were determined in the temperature range 27- 100oC. Sputtering method was used for deposition of these metals on p-GaN. Analysis of the measured characteristics at room temperature allows the determination of the electrical parameters, the saturation current Io and the ideality factorη. The barrier heights and effective Richardson coefficients were determined through activation energy plot. It was found that pinning of Fermi level occurred for these metal contacts on p-GaN with the carrier concentration of 5.6x 1017 cm-3, where the Schottky barrier heights of Zr, Ti, or Cr/p-GaN are determined to be in the same range (~0.87eV).

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Periodical:

Materials Science Forum (Volume 517)

Pages:

262-266

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.517.262

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Online since:

June 2006

Authors:

C.K. Tan, Azlan Abdul Aziz, Hassan Zainuriah, F.K. Yam, C.W. Lim, A.Y. Hudeish

Keywords:

Gallium Nitride (GaN), Pinning Fermi Level, Schottky Barrier Height SBH

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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