[1]
J. Hulliger: Angew. Chem. Int. Ed. Engl. Vol. 33 (1994), p.143.
Google Scholar
[2]
Z. W. Pan, Z. R. Dai and Z. L. Wang: Science Vol. 291 (2001), p. (1947).
Google Scholar
[3]
E. W. Wong, P. E. Sheehan and C. M. Lieber: Science Vol. 277 (1997), p. (1971).
Google Scholar
[4]
J. T. Hu, T. W. Odom, C. M. Lieber: Acc. Chem. Res. Vol. 32 (1999), p.435.
Google Scholar
[5]
L. F. Dong, J. Jiao, D. W. Tuggle, J. Petty, S. A. Elliff and M. Coulter: Appl. Phys. Lett. Vol. 82 (2003), p.1096.
DOI: 10.1063/1.1554477
Google Scholar
[6]
H. W. Kim and N. H. Kim: Appl. Surf. Sci. Vol. 233 (2004), p.294.
Google Scholar
[7]
Y. C. Choi, W. S. Kim, Y. S. Park, S. M. Lee, D. J. Bae, Y. H. Lee, G. S. Park, W. B. Choi, N. S. Lee and J. M. Kim: Adv. Mater. Vol. 12 (2000), p.746.
DOI: 10.1002/(sici)1521-4095(200005)12:10<746::aid-adma746>3.0.co;2-n
Google Scholar
[8]
H. Z. Zhang, Y. C. Kong, Y. Z. Wang, X. Du, Z. G. Bai, J. J. Wang, D. P. Yu, Y. Ding, Q. L. Hang and S. Q. Feng: Solid State Commun. Vol. 109 (1999), p.677.
DOI: 10.1016/s0038-1098(99)00015-0
Google Scholar
[9]
X. Xiang, C. -B. Cao, Y. -J. Guo and H. -S. Zhu: Chem. Phys. Lett. Vol. 378 (2003), p.660.
Google Scholar
[10]
G. Gundiah, A. Govindaraj and C. N. R. Rao: Chem. Phys. Lett. Vol. 351 (2002), p.189.
Google Scholar
[11]
R. Ma and Y. Bando: Chem. Phys. Lett. Vol. 367 (2003), p.219.
Google Scholar
[12]
B. C. Kim, K. T. Sun, K. S. Park, K. J. Im, T. Noh, M. Y. Sung, S. Kim, Appl. Phys. Lett. Vol. 80 (2002), p.479.
Google Scholar
[13]
C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, Appl. Phys. Lett. Vol. 89 (2001), p.3202.
Google Scholar
[14]
J. Guojian, Z. Hanrui, Z. Jiang, R. Meiling, L. Wenlan, W. Fengying and Z. Baolin: J. Mater. Sci. Vol. 35 (2000), p.63.
DOI: 10.1023/a:1004732314397
Google Scholar
[15]
J. -S Lee, K. Park, S. Nahm, S. -W. Kim and S. Kim: J. Cryst. Growth Vol. 244 (2002), p.287.
Google Scholar
[16]
J. M. Blakely and K. A. Jackson: J. Chem. Phys. Vol. 37 (1962), p.428.
Google Scholar