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Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD

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Abstract:

A comparative study of the structural and electrical properties of GaN films grown by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) at 700°C, with and without AlN buffer layer is presented . Hydrogen plasma was used in addition to nitrogen plasma to produce GaN. The introduction of H-plasma is found to influence the properties of the films. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and Hall Effect measurements show that the sample with AlN buffer layer possesses a smoother and more homogenous morphological characteristics as well as a lower background electron and higher Hall mobility as compared to the sample without buffer layer. X-ray diffraction (XRD) reveals that hydrogenation is capable of producing the epitaxial GaN films at reduced temperatures with the full width at half maximum (FWHM) of the x-ray rocking (XRC) of GaN (0002) reflection was found to be 54.8 and 256 arcmin for samples with buffer layer and without buffer layer, respectively.

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Periodical:

Materials Science Forum (Volume 517)

Pages:

9-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.517.9

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Online since:

June 2006

Authors:

F.K. Yam, Hassan Zainuriah, Kamarulazizi Ibrahim, M. Barmawi, Sugianto Sugianto, M. Budiman, P. Arifin

Keywords:

Buffer Layer, Characterization, Gallium Nitride (GaN), Hydrogen Plasma

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] T. L. Tansley, E. M. Goldys, M. Godlewski, Zhou and H. Y. Zuo, in: Stephen J. Pearton (Ed. ), GaN and Related Materials, (Gordon and Breach Science, Netherlands, 1997), p.237.

Google Scholar

[2] O. Ambacher, J. Phys. D: Appl. Phys. Vol. 31 (1998), p.2653.

Google Scholar

[3] A.V. Sakharov, A. S. Usikov, W. V. Lundin, A. F. Tsatsulnikov, Ru-Chin Tu, Sun Bin Yin and Jim Y. Chi, Phys. Stat. Sol. (b), Vol. 1 (2001), p.95.

DOI: 10.1002/1521-396x(200111)188:1<73::aid-pssa73>3.0.co;2-5

Google Scholar

[4] L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C. Lai, C. S. Chang, J. M. Tsai and J. K. Sheu, IEEE Transactions on Electron Devices, Vol. 50, (2003), p.1766.

DOI: 10.1109/ted.2003.815150

Google Scholar

[5] Sugianto, A. Subagio, Erzam, R. A. Sani, M. Budiman, P. Arifin, and M. Barmawi, IEEE, (2000), p.531.

DOI: 10.1109/commad.2000.1023004

Google Scholar

[6] Y. Okamoto, S. Hashiguchi, Y. Okada and M. Kawabe, Jpn. J. Appl. Phys. Vol. 38 (1999) L230.

Google Scholar

[7] S. Einfeldt, C. Kruse, S. Figge, and D. Hommel, Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, (2000), p.170.

Google Scholar

[8] T. Araki, Y. Chiba, and Y. Nanishi, J. Cryst. Growth Vol. 210 (2000), p.162.

Google Scholar

[9] T. Araki, A. Onogi, N. Juni and Y. Nanishi, J. Cryst. Growth Vol. 237-239 (2002), p.983.

Google Scholar

[10] Cheolsoo Sone, Min Hong Kim, Hyun Jin Kim, and Euijoon Yoon, J. Cryst. Growth Vol. 189/190 (1998), p.321.

Google Scholar

[11] P. Boguslawski, E. L. Briggs, J. Bernholc, Phys. Rev. B Vol. 51 (1995), p.17255.

Google Scholar

[12] Chris G. Van de Walle, Catherine Stampfl, Jörg Neugebauer, J. Cryst. Growth Vol. 189/190 (1998), p.505.

Google Scholar