Paper Titles
Comparative Analysis of λ≈9µm GaAs/AlGaAs Quantum Cascade Lasers with Different Injector Doping
p.29
Optimization of Semimagnetic Semiconductor-Based Nanostructures for Spintronic Applications
p.35
Optical Properties of PTCDA Bulk Crystals and Ultrathin Films
p.41
Mechanical Oscillations and Charge Carriers in Nanostructures
p.47
Magnetoexcitons in Type-II Self-Assembled Quantum Dots and Quantum-Dot Superlattices
p.51
Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures
p.57
Ferricoxychloride and Hematite Nanoparticles: Synthesis and Phase Transformation
p.63
Sorption of Ferric and Ferrous Ions on Silica
p.67
Syntheses of Ferrite Nanoparticles Using Ultrasound Irradiation
p.73

Magnetoexcitons in Type-II Self-Assembled Quantum Dots and Quantum-Dot Superlattices

Article Preview

Abstract:

Exciton states in type-II InP/InGaP and GaSb/GaAs self-assembled quantum dots and quantum-dot superlattices subject to a normal magnetic field are calculated. Strain is explicitly taken into account in single particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Strain reverts type II band alignment in InP quantum dots to type I, therefore no transitions between the lowest energy states of different angular momenta are observed. On the other hand, strain increases the barrier for the electron in the conduction band of GaSb/GaAs quantum dots, therefore the exciton, being composed of electron and hole states of various angular momenta, may have a finite angular momentum in the ground state. Consequently, the oscillator strength in the InP single quantum dot and quantum-dot superlattice increases with the magnetic field, while the angular momentum transitions between the bright and the dark exciton states in the GaSb system bring about decay of the oscillator strength when the magnetic field exceeds a certain value.

You might also be interested in these eBooks
Recent Developments in Advanced Materials and Processes View Preview

Info:

Periodical:

Materials Science Forum (Volume 518)

Pages:

51-56

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.518.51

Citation:

Cite this paper

Online since:

July 2006

Authors:

Dj. Veljković, M. Tadić, F.M. Peeters

Keywords:

Exciton, Quantum Dot (QD), Self-Assembled

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] M. Hayne et al.: Phys. Rev. B Vol. 62 (2000), p.10324.

Google Scholar

[2] M. Rontani et al.: Phys. Rev. B Vol. 69 (2004), p.085327.

Google Scholar

[3] K.L. Janssens, B. Partoens and F.M. Peeters: Phys. Rev. B Vol. 67 (2003), p.235325.

Google Scholar

[4] M. Tadić, V. Mlinar and F.M. Peeters: Physica E Vol. 26 (2005), p.212.

Google Scholar

[5] F. Hatami et al.: Phys. Rev. B Vol. 57 (1998), p.4635.

Google Scholar

[6] S. Kobayashi, C. Jiang, T. Kawazu and H. Sakaki: Jap. J. Appl. Phys Vol. 43 (2004), p. L662.

Google Scholar

[7] I. Vurgaftman, J.R. Meyer and L.R. Ram-Mohan: J. Appl. Phys. Vol. 89 (2001), p.5815.

Google Scholar

[8] Y. Gu et al.: Phys. Rev. B Vol. 71 (2005), p.045340; I.L. Kuskovsky (unpublished).

Google Scholar

[9] A.O. Govorov et al.: Phys. Rev. B Vol. 66 (2002), p.081309.

Google Scholar