Paper Titles
Apatite-Coated Poly(lactic acid) Composites with Cell-Compatibility Prepared by a Biomimetic Method
p.239
PLLA/HA Electrospin Hybrid Nanofiber Scaffolds: Morphology, In Vitro Degradation and Cell Culture Potential
p.243
Porous Apatite Ceramics Derived from Woods
p.247
Selective Adsorption of Microorganisms onto Artificial Siderophore-Modified Glass Surface
p.251
SiCOI Structure Fabricated by Hot-Mesh Chemical Vapor Deposition
p.257
Epitaxial Growth of Hexagonal GaN Films on SiC/Si Substrates by Hot-Mesh CVD Method
p.261
Characteristics of SiC Heteroepitaxial Growth on Si by Hot-Mesh Chemical Vapor Deposition
p.265
Effect of Atmosphere on Zinc Oxide Crystal Growth by Electric Current Heating with Au Catalyst
p.269
Micro-Columnar Crystals with (-O=V-Pd-)n Infinite Chain Structures Assembled by Hetero-Dinuclear Metal Complexes
p.273

SiCOI Structure Fabricated by Hot-Mesh Chemical Vapor Deposition

Article Preview

Abstract:

The growth of 3C-SiC on thermal oxide layer of Si (SiO2) was investigated by hot-mesh (HM) chemical vapor deposition (CVD), which utilizes hot tungsten (W) wires of a mesh structure as a catalyzer. The SiC films were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and cross sectional transmission electron microscopy (TEM). From the XRD spectra of SiC films grown on SiO2 layer, (100) oriented SiC films were grown at the substrate temperatures of 750-800°C and the mesh temperature of 1600°C, while polycrystalline SiC films were grown at the substrate temperature above 900°C. From the data of FT-IR, TEM and the growth rate, the growth characteristics of SiC crystal by HMCVD were discussed.

You might also be interested in these eBooks
AICAM 2005 View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 11-12)

Pages:

257-260

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.11-12.257

Citation:

Cite this paper

Online since:

February 2006

Authors:

Kanji Yasui, T. Kurimoto, Masasuke Takata, Tadashi Akahane

Keywords:

Cat-CVD, Monomethylsilane, Silicon Carbide (SiC), SOI, Tungsten Mesh

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] M. Mehregany and C.A. Zorman, N. Rajan and C.H. Wu: Proc. IEEE Vol. 86 (1998), p.1594.

Google Scholar

[2] P.M. Sarro: Sens. Actuators Vol. 82 (2000), p.210.

Google Scholar

[3] Q.Y. Tang, U. Gosele, C. Yuan, A.J. Steckl and M. Reiche: J. Elctrochem. Soc. Vol. 142 (1995), p.232.

Google Scholar

[4] C. Serre, A.R. Rodriguez, A.P. Rodriguez, J.R. Morante, L. Fonseca, M.C. Acero, R. Kogler and W. Skorupa: Sens. Actuators Vol. 74 (1999), p.169.

Google Scholar

[5] C.H. Wu, C.A. Zorman and M. Mehregany: Mater. Sci. Forum Vol. 338-342 (2000), p.541.

Google Scholar

[6] Y. Onuma, R. Okada, H. Ono and K. Kamimura: Proc. Int. Conf. SiC and Related Materials, Washington DC, USA (1993), p.133.

Google Scholar

[7] K. Yasui, K. Asada, T. Maeda and T. Akahane: Appl. Surf. Sci. Vol. 175-176 (2001), p.495.

Google Scholar

[8] K. Yasui, K. Morimoto, M. Takata and T. Akahane: Abst. 12th Int. Conf. Solid Films & Surfaces, Hamamatsu, Japan (2004), p.80.

Google Scholar

[9] K. Yasui, J. Eto, Y. Narita, M. Takata and T. Akahane: Jpn. J. Appl. Phys. Vol. 44 (2005), p.1361.

Google Scholar

[10] J.S. Shor, D. Goldstein and A.D. Kurtz: IEEE Trans. Electron Devices Vol. 40 (1993), p.1093.

Google Scholar

[11] S. Miyajima, A. Yamada and M. Konagai: Tech. Dig. 14th Int. Photovoltaic Science and Engineering Conf., Bangkok (2004), p.367.

Google Scholar

[12] Q. Zhao, J.C. Li, H. Wang, B. Wang and H. Yan: J. Cryst. Growth Vol. 260 (2004), p.176.

Google Scholar

[13] Y. Ohshita: J. Electrochem. Soc. Vol. 142 (1995), p.1002.

Google Scholar