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Epitaxial Growth of Hexagonal GaN Films on SiC/Si Substrates by Hot-Mesh CVD Method

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Abstract:

Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial films were grown on the SiC layer by the reaction between NHx radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 1200°C showed good crystallinity. Photoluminescence spectra of GaN films grown by the three step growth technique showed a strong near-band-edge emission and a weak yellow luminescence.

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AICAM 2005 View Preview

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Periodical:

Advanced Materials Research (Volumes 11-12)

Pages:

261-264

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.11-12.261

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Online since:

February 2006

Authors:

Kazuki Takahashi, Kanji Yasui, Maki Suemitsu, Ariyuki Kato, Yuichiro Kuroki, Masasuke Takata, Tadashi Akahane

Keywords:

Hexagonal GaN, Hot-Mesh CVD, Si Substrate

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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