Fabrication and Properties of SrBi2(Ta1-xNbx)2O9 Ferroelectric Ceramics

Wen Wang; Ke Yu; Hua Ke; Hai Jun Niu; De Chang Jia; Yu Zhou

doi:10.4028/www.scientific.net/KEM.336-338.143

Paper Titles

The Influence of Thin Film Thickness on the Characteristics of Bismuth Titanate Oxide
p.129

Structure and Dielectric Properties of Homogeneous Sr_m-3Bi₄Ti_mO_3m+3 (m = 3, 4, 5, and 6) Ceramics
p.133

The Influence of Precursor on the Microstructure and Characterization for Sr_0.5Ba_0.5Bi₄Ti₄O₁₅ Thin Films
p.136

Synthesis and Properties of (Bi_0.5Na_0.5)TiO₃ Powders by Hydrothermal Method
p.140

Fabrication and Properties of SrBi₂(Ta_1-xNb_x)₂O₉ Ferroelectric Ceramics
p.143

Study on Ferroelectric Properties of Nd-Doped Bi₄Ti₃O₁₂ Thin Films Prepared by Sol-Gel Method
p.146

Electrical Characteristics and Microstructures of Gd-Doped Bi₄Ti₃O₁₂ Ceramics
p.149

Electrical Characteristics and Microstructures of Nd₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.152

Dielectric Characterization and Microstructures of Pr₆O₁₁-Doped Bi₄Ti₃O₁₂ Thin Films
p.155

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Fabrication and Properties of SrBi₂(Ta_1-xNb_x)₂O₉ Ferroelectric Ceramics

Abstract:

SrBi2(Ta1-xNbx)2O9(SBTN) ferroelectric ceramics with typical bismuth layered perovskite structure were synthesized with a reactive hot-press sintering process at 1000°C for 2h. The as-sintered SBTN (x=0.2, 0.4, 0.6, 0.8) materials had a maximum relative density of 95.97%. Bi-layered perovskite structure was obtained. The grain sizes increased with increasing Nb content. In 1MHz frequency, remanent polarization (Pr) of SBTN (x=0.2, 0.4, 0.6, 0.8) were 10.0, 3.0, 1.7 and 1.0, while coercive field (Ec) of SBTN (x=0.2, 0.4, 0.6, 0.8) were 50, 32, 33 and 33kV/cm, respectively.