Paper Titles
Structure and Dielectric Properties of Homogeneous Srm-3Bi4TimO3m+3 (m = 3, 4, 5, and 6) Ceramics
p.133
The Influence of Precursor on the Microstructure and Characterization for Sr0.5Ba0.5Bi4Ti4O15 Thin Films
p.136
Synthesis and Properties of (Bi0.5Na0.5)TiO3 Powders by Hydrothermal Method
p.140
Fabrication and Properties of SrBi2(Ta1-xNbx)2O9 Ferroelectric Ceramics
p.143
Study on Ferroelectric Properties of Nd-Doped Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method
p.146
Electrical Characteristics and Microstructures of Gd-Doped Bi4Ti3O12 Ceramics
p.149
Electrical Characteristics and Microstructures of Nd2O3-Doped Bi4Ti3O12 Thin Films
p.152
Dielectric Characterization and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films
p.155
Dielectric Characteristics of Doped Strontium Titanate within Broad Temperature Range
p.158

Study on Ferroelectric Properties of Nd-Doped Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method

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Abstract:

Nd-doped bismuth titanate Bi4-xNdxTi3O12 (BNT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol-gel method and spin-coating technique. The structures and the ferroelectric properties of the films were investigated. Nd doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 260 kV/cm, Pr and Ec of the BNT film with x=0.5 annealed at 650oC are 19 μC/cm2 and 135 kV/cm, respectively. Moreover, the BNT film with x=0.5 showed a fatiguefree behavior up to 3×1010 read/write cycles.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Pages:

146-148

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.336-338.146

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Online since:

April 2007

Authors:

Y.H. Sun, X.B. Liu, Min Chen, J. Liu, S. Chen, Z.M. Wan

Keywords:

Bi4Ti3O12, Doping, Ferroelectric, Thin Film

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] T. Kijima, M. Ushikubo and H. Matsunaga: Jpn. J. Appl. Phys. Vol. 38 (1999), p.127.

Google Scholar

[2] X. Du and I. Chen: J. Am. Ceram. Soc. Vol. 81 (1998), p.3253.

Google Scholar

[3] D. Wu, A. Li, T. Zhu, Z. Liu and N. B. Ming: J. Appl. Phys. Vol. 88 (2000), p.5941.

Google Scholar

[4] T. Kijima, S. Satoh, H. Matsunaga and M. Koba: Jpn. J. Appl. Phys. Vol. 35 (1996), p.1246.

Google Scholar

[5] B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee and W. Jo: Nature Vol. 401 (1999), p.682.

Google Scholar

[6] T. Kojima, T. Sakai, T. Watanabe, H. Funakubo, K. Saito and M. Osada: Appl. Phys. Lett. Vol. 80 (2002), p.2746.

Google Scholar

[7] H. N. Lee, D. Hesse, N. Zakharow, and U. Gosele: Science Vol. 296 (2002), pp. (2006).

Google Scholar

[8] H. Matssuda, S. Ito and T. Iijima: Appl. Phys. Lett. Vol. 83 (2003), p.2003. Fig. 5. Temperature dependence of the dielectric constant and the dissipation factor for Bi3. 5Sm0. 5Ti3O12 film.

Google Scholar