Paper Titles
Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive
p.191
Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
p.195
Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis
p.199
Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si
p.203
Trends in Dopant Incorporation for 3C-SiC Films on Silicon
p.207
Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps
p.213
6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
p.219
Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
p.223
An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers
p.227

Trends in Dopant Incorporation for 3C-SiC Films on Silicon

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Abstract:

We have investigated the influence of several growth parameters on the incorporation of doping species in the case of 3C-SiC layers grown by CVD on silicon. This includes nitrogen (both intentional and residual) as well as residual aluminum. All concentrations have been determined by SIMS (Secondary Ion Mass Spectrometry). First, we investigated the effect of the growth temperature, growth rate and C/Si ratio on the doping level of (100) oriented layers. Then, we compared the change in nitrogen incorporation versus nitrogen flow rate for layers grown on (100), (111), (110) and (211) oriented wafers.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

207-210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.207

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Online since:

September 2007

Authors:

Marcin Zielinski, Marc Portail, Hervé Peyre, Thierry Chassagne, S. Ndiaye, Bernard Boyer, André Leycuras, Jean Camassel

Keywords:

3C-SiC, Compensation, N-Doping, SIMS

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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