Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC

Michael R. Jennings; Amador Pérez-Tomás; D. Walker; Lin Zhu; Peter A. Losee; W. Huang; S. Balachandran; Owen James Guy; James A. Covington; T. Paul Chow; Philip  Andrew Mawby

doi:10.4028/www.scientific.net/MSF.556-557.697

Paper Titles

Trap Assisted Conduction in High K Dielectric Capacitors on 4H-SiC
p.679

X-Ray and AFM Analysis of Al₂O₃ Deposited by ALCVD on n-Type 4H-SiC
p.683

A Case for High Temperature, High Voltage SiC Bipolar Devices
p.687

Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface
p.693

Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC
p.697

Electronic Structure of Graphite/6H-SiC Interfaces
p.701

Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)
p.705

High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application
p.709

Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts
p.713

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Development of Low Resistance Al/Ti Stacked Metal...

Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC

Abstract:

In this work, we have investigated triple and innovative multiple stacked contacts onto ptype SiC in order to evaluate whether or not there is any improvement in morphology or specific contact resistivity. The stacked metal contacts are based on Al, Ti and Ni with the specific contact resistivity measured at a low value of 5.02×10-6'cm2 for an Al(100 nm)/Ti(100 nm)/Al(10 nm) (where a “/” indicates the deposition sequence) triple stacked metal contact. XRD microstructural analysis and SEM measurements have been carried out and it has been discovered that the contacts, which formed the compound Ti3SiC2 at the metal/SiC interface, more readily display low-resistance ohmic characteristics after a post deposition anneal. Although the same amount of Ti (100 nm in total) has been deposited closer to the metal/SiC interface, none of the multiple stacked structures displayed ohmic behaviour after a post deposition anneal.