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Study on Removal Mechanism of Fixed-Abrasive Diamond Wire Saw Slicing Monocrystalline Silicon

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Abstract:

The physical model of fixed-abrasive diamond wire-sawing monocrystalline silicon was founded to analyze the elastic deformation of the wire, supposing that every grit was connected to the surface of the wire by a spring. Ignoring lateral vibration of the wire, the geometrical model of wire-sawing was founded; the average cut depth of single grit was calculated theoretically. Based the indentation fracture mechanics and investigations on brittle-ductile transition of machining monocrystalline silicon, the removal mechanism and surface formation was studied theoretically. It shows that in the case of wire-sawing velocity of 10m/s or higher, infeed velocity of 0.20mm/s and diamond grain size of 64μm or smaller, the chip formation and material removal is in a brittle regime mainly, but the silicon wafer surface formation is sawed in a ductile regime. The size of the abrasives, the wire-saw velocity and infeed velocity can influence the sawing process obviously.

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Periodical:

Key Engineering Materials (Volumes 359-360)

Pages:

450-454

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.359-360.450

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Online since:

November 2007

Authors:

Yu Fei Gao, Pei Qi Ge, Zhi Jian Hou

Keywords:

Brittle-Ductile Transition, Monocrystalline Silicon, Removal Mechanism, Wire Saw

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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