Structural and Electrical Properties of ZnO Films on Freestanding Thick Diamond Films

Article Preview

Abstract:

In this paper, ZnO films are deposited on Freestanding Thick Diamond (FTDF) by plasma-assisted Metal Organic Chemical Vapour Deposition (MOCVD). Diethyl zinc, O2, and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction, Hall measurements, and electron probe microanalysis. Experimental results demonstrate that ZnO films deposited at 600°C and 73Pa displays fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.

You might also be interested in these eBooks

Info:

Periodical:

Materials Science Forum (Volumes 561-565)

Pages:

2423-2426

Citation:

Online since:

October 2007

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, J. Appl. Phys. 98 (2005) 041301.

DOI: 10.1063/1.1992666

Google Scholar

[2] Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, Appl. Phys. Lett. 83 (2003)4719.

DOI: 10.1063/1.1632537

Google Scholar

[3] H. Ohta, H. Mizoguchi, M. Hirano, S. Narushima, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 82 (2003) 823.

Google Scholar

[4] X. Y. Kong, Y. Ding, R. Yang, and Z. L. Wang, Science 303 (2004)1348.

Google Scholar

[5] U. Rau, M. Schmidt, Thin Solid Films 387 (2001) 141.

Google Scholar

[6] D. Persegol, E. Pic, J. Plantier, J. Appl. Phys. 62 (1987) 2563.

Google Scholar

[7] J. Sun, Y. Z Bai, T. P. YANG, Y. B. Xu, X.S. Wang, G.T. Du, H. H. Wu, Chin. Phys. Lett. 23 (2006) 1321.

Google Scholar

[8] M. B. Assouar, O. Elmazria, R. Jimenez Rioboo, F. Sarry, P. Alnot App. Suf. Sci. 164 (2000) 200.

Google Scholar

[9] M. B. Assouar, F. Bénédic, O. Elmazria, M. Belmahi, R. Jiménez, Riobóo, P. Alnot, Diam. Rel. Mater. 10 (2001) 681.

DOI: 10.1016/s0925-9635(00)00493-3

Google Scholar

[10] B. Bi, W. S. Huang, J. Asmussen, B. Golding Diam. Rel. Mater. 11 (2002) 677.

Google Scholar

[11] J. J. Chen, F. Zeng, D.M. Li, J.B. Niu, F. Pan, Thin Solid Films 485 (2005) 257.

Google Scholar

[12] S. H. Seo, W. C. Shin and J. S. Park, Thin Solid Films 416 (2002) 190.

Google Scholar

[13] T Lamara, M. Belmahi, O. Elmazria, L. Le Brizoual, J. Bougdira, M. Remy, P. Alnot, Diam. Rel. Mater. 13 (2004) 581.

DOI: 10.1016/j.diamond.2003.10.075

Google Scholar

[14] M. E. Hakiki, O. Elmazria, M.B. Assouar, V. Mortet, L. Le Brizoual, M. Vanecek, P. Alnot, Diam. Rel. Mater. 14 (2005) 1175.

DOI: 10.1016/j.diamond.2005.01.002

Google Scholar

[15] Z. S. Jin, Z. G. Jiang, Y. Z. Bai, X. Y. Lv, Chin. Phys. Lett. 19 (2002) 1374.

Google Scholar

[16] Y. Z. Bai, Z. G. Jiang, C. L. Wang, Z. S. Jin, X. Y. Lv, G. T. Zou, Chin. Phys. Lett. 15 (1998) 228.

Google Scholar

[17] C. W. Sun, Z. W. Liu, F. W. Qin, Q. Y. Zhang, K. Liu, S. F. Wu, Acta. Phys. Sin, 55 (2006) 390 (in Chinese).

Google Scholar

[18] B. S. Li, Y. C. Liu, Z. S. Chu, D. Z. Shen, Y. M. Lu, J. Y. Zhang, and X. W. Fan J. App. Phys. 91 (2002) 501.

Google Scholar

[19] Y. G. Wang, T. S. Jeong, M. S. Ham, J. H. Kim J. Crystal. Growth 94 (2003) 1597.

Google Scholar

[20] F G Chen, Z Z Ye, W Z Xu, B H Zhao, L P Zhu, J G Lv, J. Crystal. Growth 281 (2005) 458.

Google Scholar

[21] J C Sun, T P Yang, G T Du, H W Liang, J M Bian, L Z Hu, Appl. Surf. Sci. In Press, Corrected Proof.

Google Scholar

[22] H. Hirasawa, M. Yoshida, S. Nakamura, Y. Suzuki, S. Okada, K. Kondo, Sol. Energy Mater. Sol. Cells 67 (2001) 231.

Google Scholar