Depth Selective Electronic State Analysis of Implanted Nitrogen in Visible-Light Response TiO2 Photocatalyst

Tomoko Yoshida; Shunsuke Muto; Jun Wakabayashi

doi:10.4028/www.scientific.net/MSF.561-565.567

Paper Titles

Development of Efficient Metal Catalyst Support
p.547

Microstructure and Electrical Properties of Calcium Copper Titanate Ceramics
p.551

Negative Thermal Expansion in Mn₃Ga(Ge,Si)N Anti-Perovskite Materials
p.557

Wear Characteristics of Bulk Ti₃AlC₂ under Current-Carrying Conditions
p.563

Depth Selective Electronic State Analysis of Implanted Nitrogen in Visible-Light Response TiO₂ Photocatalyst
p.567

Novel Aluminium Nitride Surface Coatings Formed on Aluminium
p.571

Densification and α/β Phase Transformation of SHS Si₃N₄ Containing Al₂O₃ and Y₂O₃ during Sintering
p.577

Zinc Oxide Ceramics with High Mobility as n-Type Thermoelectric Materials
p.581

Preparation and Characterization of β-SiAlON Ceramics from High Aluminium Fly Ash via Carbothermal Reduction-Nitridation
p.587

HomeMaterials Science ForumMaterials Science Forum Vols. 561-565Depth Selective Electronic State Analysis of...

Depth Selective Electronic State Analysis of Implanted Nitrogen in Visible-Light Response TiO₂ Photocatalyst

Abstract:

Energetic nitrogen ion was injected into a TiO2 photocatalyst in order to investigate the optimal local concentration of doped nitrogen for visible-light response. N+-implanted TiO2 samples promoted the photocatalytic activity under visible-light irradiation. N K-edge XANES of the highest activity sample indicated that N replaces the O sites near the surface, whereas in the samples of higher N+ fluence, N−O and/or N−N species formed. Depth-resolved N K-edge ELNES revealed the two types of N, depending on the concentration, and we found the local N concentration effective for visible-light response was less than ∼1 at%. Further, the spatial distributions of the different chemical states of N by energy-filtering TEM (FETEM) supported these findings.