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Comparative Study of Copper Diffusion in Plasma Treated Low-k Dielectric Thin Film Using XPS and SIMS

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Abstract:

Low-k dielectric improves the switching speed by reducing the parasitic capacitance in integrated circuits. However it suffers the problem of copper diffusion. Forming gas (H2 + N2) plasma treatment on the surface of HSG-7000 low-k dielectric thin film has demonstrated to improve copper diffusion resistance. Two techniques using X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectroscopy (SIMS) have been used to examine the copper diffusion on this thin film. A thin layer of 10 nm with C-N bonds near the HSG-7000 surface were believed to be created by the plasma treatment and confirmed with XPS and SIMS and acts as barrier.

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Periodical:

Advanced Materials Research (Volumes 29-30)

Pages:

347-350

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.29-30.347

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Online since:

November 2007

Authors:

K.C. Aw, N.T. Salim, Wei Gao, Zheng Wei Li, K. Prince

Keywords:

Copper Diffusion, Low-k Dielectrics, SIMS, X-Ray Photoelectron Spectroscopy (XPS)

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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