Paper Titles

Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE
p.1

Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and Al_xGa_1-xAs Layers
p.9

Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode
p.13

Sb Delta-Type Doping in Si-MBE Superlattices
p.17

Molecular Beam Heteroepitaxy on Silicon Substrates
p.21

MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors
p.29

Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source
p.37

Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions
p.41

PED Mechanism Studied by Moleculardynamic Computer Simulation
p.45

HomeMaterials Science ForumMaterials Science Forum Vol. 69Sb Delta-Type Doping in Si-MBE Superlattices

Sb Delta-Type Doping in Si-MBE Superlattices

Article Preview

Abstract:

You might also be interested in these eBooks

Molecular Beam Epitaxy

Info:

Periodical:

Materials Science Forum (Volume 69)

Pages:

17-20

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.17

Citation:

Cite this paper

Online since:

January 1991

Authors:

Alexander I. Nikiforov, B.Z. Kanter, S.I. Stenin, S.V. Rubanov

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1991 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: