Paper Titles

Atomic Relaxation Modes in Grain Boundaries
p.65

Computer Simulation of Twinning Dislocations in Zirconium and Other H.C.P. Metals
p.69

Symmetric (011)Tilt Grain Boundaries in Si and Ge: Interfacial Dislocation Concept
p.73

The Atomic Structure of Ʃ=3 {111}Twin Boundaries in Ordered Cu₃Au
p.77

Theoretical Study of the Polar and Non-Polar Interfaces of Grain Boundaries in Compound Semiconductors
p.81

Grain Boundary Transformations in Bi-Doped Copper
p.85

Elastic Field Associated to Grain Boundaries
p.89

Thermodynamic Behaviour of Domain Walls in Ordered Alloys: An Experimental Comparison between First and Second Order Transitions
p.93

High Resolution Transmission Electron Microscopy of a β'-Sialon-TiN Nanocomposite
p.97

HomeMaterials Science ForumMaterials Science Forum Vols. 126-128Theoretical Study of the Polar and Non-Polar...

Theoretical Study of the Polar and Non-Polar Interfaces of Grain Boundaries in Compound Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Intergranular and Interphase Boundaries in Materials

Info:

Periodical:

Materials Science Forum (Volumes 126-128)

Pages:

81-84

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.126-128.81

Citation:

Cite this paper

Online since:

January 1993

Authors:

Masanori Kohyama, S. Kose, Ryoichi Yamamoto

Keywords:

{122 }Ʃ=9 Boundary, {211 }Ʃ=3 Boundary, Atomic Structure, Chemical Potential, Compound Semiconductor, Electronic Structure, Non-Polar Interfaces, Polar Interfaces, Ʃ=9 Boundary, Self-Consistent Tight-Binding Method, Silicon Carbide (SiC), Stoichiometry, Symmetrical Tilt Grain Boundary, Thermodynamic Potential, Wrong Bond, Zinc Blende Structure

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: