Paper Titles

Hydrogen Diffusion in Compound Semiconductors
p.219

Vibrational Spectroscopy of Dopant-Hydrogen Complexes in III-V Semiconductors
p.251

Hydrogen in Crystalline Gallium Phosphide
p.281

Hydrogen in Ternary and Quaternary Materials
p.295

Shallow Levels Passivation in Implanted and Plasma Hydrogenated Compound Semiconductors
p.321

Theoretical and μSR Studies Related to Hydrogen in Compound Semiconductors
p.349

Hydrogen in III-V Compound Semiconductors
p.393

Spectroscopy of Hydrogen-Related Defects in III-V Semiconductors by Nuclear Techniques
p.481

Hydrogen in III-V Device Structures
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HomeMaterials Science ForumMaterials Science Forum Vols. 148-149Hydrogen in III-V Compound Semiconductors

Hydrogen in III-V Compound Semiconductors

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Hydrogen in Compound Semiconductors

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Periodical:

Materials Science Forum (Volumes 148-149)

Pages:

393-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.148-149.393

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Online since:

December 1993

Authors:

Stephen J. Pearton

Keywords:

CH₄/H₂, Cleaning, Deep Level, Dopant Passivation, Dry Etching, ECR, GaAs, Growth, HBr/H₂, Hl/H₂, Hydrogen, InGaAs, InP, Process, Wet Etching

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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