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HomeMaterials Science ForumMaterials Science Forum Vol. 203Growth and Realization of InGaAs/InP and...

Growth and Realization of InGaAs/InP and InGaAs/InGaAsP Quantum Photonic Devices Grown by Chemical Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 203)

Pages:

109-114

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.203.109

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Online since:

February 1996

Authors:

C. Rigo, C. Cacciatore, D. Campi, C. Coriasso, D. Soldani, A. Stano

Keywords:

Chemical Beam Epitaxy, InGaAs/InGaAsP, InGaAs/InP

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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