Paper Titles

Annealing of Low-Temperature Substitutional Gold in Silicon: Ring-Diffusion of Substitutional Gold in Silicon
p.1789

Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon
p.1795

Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology
p.1801

Influence of the Dislocation Loops on the Anomalous Diffusion of Fe Implanted into InP
p.1807

Lithium Induced Vacancy Formation and its Effect on the Diffusivity of Lithium in Gallium Arsenide
p.1813

Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAs
p.1821

Low Temperature Intrinsic Diffusion Coefficient of Lithium in GaAs
p.1827

Low Temperature Impurity Diffusion into Large-Band-Gap Semiconductors
p.1833

Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
p.1839

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Low Temperature Intrinsic Diffusion Coefficient of...

Low Temperature Intrinsic Diffusion Coefficient of Lithium in GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1827-1832

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1827

Citation:

Cite this paper

Online since:

December 1997

Authors:

K. Leosson, H.P. Gislason

Keywords:

Defect Complexes, Diffusion, GaAs, Lithium

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: