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HomeKey Engineering MaterialsKey Engineering Materials Vols. 169-170Electrical Properties of ZrO2 Thin Films Doped...

Electrical Properties of ZrO₂ Thin Films Doped with In₂O₃ by Sol-Gel Method

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Electroceramics in Japan II

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Periodical:

Key Engineering Materials (Volumes 169-170)

Pages:

175-178

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.169-170.175

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Online since:

June 1999

Authors:

Yutake Ohya, M. Murayama, Yasutaka Takahashi

Keywords:

Electrical Conductivity, Ion Transference Number, Sol-Gel Method, Thin Film, ZrO₂-In₂O₃

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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