Paper Titles
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Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate
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SiC Power Devices: How to be Competitive towards Si-Based Solutions?
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SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations
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Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
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SiC Power Devices: How to be Competitive towards Si-Based Solutions?

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

805-812

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.805

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Online since:

September 2003

Authors:

Roland Rupp, I. Zverev

Keywords:

Cascode, Cost Performance Ratio, Junction Field Effect Transistor (JFET), Power Device, Power Supply, Schottky Diode

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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