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Magnetotransport Properties in a Lateral Spin-Injection Device with a Ferromagnetic/Si/ Ferromagnetic Junction

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Abstract:

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 – 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

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Periodical:

Materials Science Forum (Volumes 449-452)

Pages:

1081-1084

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.449-452.1081

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Online since:

March 2004

Authors:

Woong Joon Hwang, H.J. Lee, K.I. Lee, J.M. Lee, J.Y. Chang, S.H. Han, Y.K. Kim, W.Y. Lee, Moo Whan Shin

Keywords:

Hybrid Ferromagnetic Metal/Semiconductor, Spin Injection, Spin-Polarized Transport

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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