Dry Oxidation Behavior of Epitaxial Si0.7Ge0.3 Films

H.B. Kang; J.K. Choi; J.W. Lee; Cheol Woong Yang

doi:10.4028/www.scientific.net/MSF.449-452.361

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HomeMaterials Science ForumMaterials Science Forum Vols. 449-452Dry Oxidation Behavior of Epitaxial Si0.7Ge0.3...

Dry Oxidation Behavior of Epitaxial Si_0.7Ge_0.3 Films

Abstract:

We have investigated the oxidation behavior of epi-Si_0.7Ge_0.3 films in dry oxygen ambient. Epi- Si_0.7Ge_0.3 films about 500Å in thickness were deposited on (100) Si wafers by UHV-CVD system. Oxidation was carried out in a conventional tube furnace at 800 °C . In this study, it was found that Ge piles up at the oxide/substrate interface, forming a Ge-rich layer. Because of the large difference in the heat of formation between SiO₂(-730.4KJ/mol at 1000K) and GeO₂(-387.07 at 1000K) [1], the Si is to be more reactive than Ge to oxygen. The oxidation rate of SiGe in a dry oxygen environment is found to be essentially the same as that of pure Si.