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Optical-Property Profiling of SiO2 Films Containing Si Nanocrystals Formed by Si+ Implantation

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Abstract:

A quantitative approach to determination of depth profiles of optical properties of Si-implanted SiO2 films based on spectroscopic ellipsometry (SE) is presented. From the SE measurements, the depth profiles of the complex refractive index of SiO2 films containing Si nanocrystals (Si-nc) are obtained with an effective medium approximation (EMA) in the wavelength range of 400-1200nm. The optical profiles obtained imply the existence of a wave-guide in the Si-doped SiO2 films.

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Periodical:

Journal of Metastable and Nanocrystalline Materials (Volume 23)

Pages:

133-136

DOI:

https://doi.org/10.4028/www.scientific.net/JMNM.23.133

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Online since:

January 2005

Authors:

Y. Liu, T.P. Chen, M.S. Tse, P.F. Ho, A.L.K. Tan, Y.C. Liu

Keywords:

Depth Profile, Ellipsometry, Si Nanocrystal

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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