Paper Titles
In Vitro Corrosion Behavior and Apatite-Formation of Electrolytic Nanocrystalline TiO2 Coating for Biomedical Applications
p.121
Mercury-Telluride Nanocrystalline Thin Films: A Unique Photoluminescence in the Visible Regime
p.125
Optical and Electron Correlation Effects in Silicon Quantum Dots
p.129
Optical-Property Profiling of SiO2 Films Containing Si Nanocrystals Formed by Si+ Implantation
p.133
Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires
p.137
Structural and Microwave Properties of Copper Ferrite Nanoparticles Prepared by Sol-Gel Synthesis
p.141
Synthesis and Characterization of Nano-Composite Lead-Free Solder
p.145
Creation of High Performance Mg Based Composite Containing Nano-Size Al2O3 Particulates as Reinforcement
p.151
Damping Characterization of Bulk Nanostructured Nickel Using an Innovative Circle-Fit Approach: Effect of Frequency
p.155

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

Article Preview

Abstract:

Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm-1,which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev,1.42ev,1.47ev. Possible reason for these is suggested. PACS: 36.40._c; 81.15.Gh; 81.20._n

You might also be interested in these eBooks
Science and Technology of Nanomaterials View Preview

Info:

Periodical:

Journal of Metastable and Nanocrystalline Materials (Volume 23)

Pages:

137-140

DOI:

https://doi.org/10.4028/www.scientific.net/JMNM.23.137

Citation:

Cite this paper

Online since:

January 2005

Authors:

X.B. Zeng, X.B. Liao, S.T. Dai, B. Wang, Y.Y. Xu, X.B. Xiang, Z.H. Hu, H.W. Diao, G.L. Kong

Keywords:

Chemical Vapor Deposition Processes, Nanomaterial, Semiconducting Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] A.M. Morales, C.M. Lieber Science 279(1998) 208.

Google Scholar

[2] J.D. Holmes, K.P. Johnston, R.C. Doty, B.A. Korgel Science 287(2000 ) 1471.

Google Scholar

[3] D.P. Yu, Y.J. Xing, Q.L. Hang, H.F. Yan, J. Xu, Z.H. Xi,S.Q. Feng, Physica E 9(2001) 305.

Google Scholar

[4] K.K. Lew, C. Reuther, A.H. Carim, J.M. Redwing, B.R. Martin, J. Vac. Sci. Technol. B 20(2002) 389.

Google Scholar

[5] P Bettotti, M Cazzanelli, L Dal Negro, B Danese, Z Gaburro, C J Oton, G Vijaya Prakash and L Pavesi J. Phys.: Condens. Mater 14(2002 ) 8253.

DOI: 10.1088/0953-8984/14/35/305

Google Scholar

[6] Charles M. Lieber Solid State Communications 107(1998) 607.

Google Scholar

[7] Yi Cui, Xiangfeng Duan, Jiangtao Hu, Charles M Lieber J. Phys. Chem. B104(2000) 5213.

Google Scholar

[8] Yi Cui, Charles M. lieber Science 291(2001) 851.

Google Scholar

[9] R.P. Wang G.W. Zhou Y.L. Liu S.H. Pan H.Z. Zhang D.P. Yu,Z. Zhang, Phys. Rev. B 61(2000 ) 16827.

Google Scholar

[10] J. Qi,J.M. White A.M. Belcher.Y. Masumoto Chem. Phys. Lett. 372(2003) 763.

Google Scholar

[11] L.T. CanhamAppl. Phys. Lett. 57(1990) 1046.

Google Scholar

[12] J. Qi, A.M. Belcher, J.M. White Appl. Phys. Lett. 82(2003) 2616.

Google Scholar

[13] X.B. Zeng, Y.Y. Xu, S.B. Zhang, Z.H. Hu, H.W. Diao, Y.Q. Wang G.L. Kong, X.B. Liao J. crystal. Growth 247(2003) 13.

Google Scholar

[14] R. Tsu Appl. Phys. Lett. 60(1992) 112.

Google Scholar

[15] S.T. Kshirsagar, R.O. Dusane and V.G. Bhide Phys. Rev. B 40(1989) 8026.

Google Scholar

[16] R. Saleh , N.H. Nickel, Thin Solid Films 427(2003) 266.

Google Scholar

[17] A. Wellner, R. E. Palmer, J. G. Zheng, C. J. Kiely and K. W. Kolasinski J. Appl. Phys. 91(2002) 3294.

Google Scholar

[18] T.V. Torchynska, J. Palacios Gomez, G.P. Polupan, F.G. Becerril Espinoza, A. Garcia Borquez, N.E. Korsunskayab, L. Yu. Khomenkova Appl. Sur. Sci. 167(2000) 197.

DOI: 10.1016/s0169-4332(00)00529-8

Google Scholar

[19] A. V. Kabashin, M. Meunier Appl. Phys. Lett. 82(2003) 1619.

Google Scholar

[20] T. V. Torchynska, M. Morales Rodriguez,F. G. Becerril Espinoza, L. Yu. Khomenkova, N. E. Korsunska, and L. V. Scherbina Phys. Rev. B 65(2002) 115313.

DOI: 10.1103/physrevb.65.115313

Google Scholar

[21] S. Rupp, J. Quilty,H. J. Trodahl, M. H. Ludwig and R. E. Hummel, Appl. Phys. Lett. 70(1997) 723.

Google Scholar

[22] S. M. Prokes Appl. Phys. Lett. 62(1993) 3244.

Google Scholar

[23] Tsutomu Shimizu-Iwayama, Setsuo Nakao and Kazuo Saitoh Appl. Phys. Lett. 65(1994) 1814.

Google Scholar

[24] Yoshihiko Kanemitsu, Tetsuo Ogawa, Kenji Shiraishi and Kyozaburo Takeda Phys. Rev. B 48(1993 ) 4883.

Google Scholar

[25] C Pickering, M I J Beale, D J Robbins, P J Pearson and R Greef J. Phys. C: Solid State Phys. 17(1984) 6535.

Google Scholar