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Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

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Abstract:

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

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Periodical:

Journal of Metastable and Nanocrystalline Materials (Volume 23)

Pages:

43-46

DOI:

https://doi.org/10.4028/www.scientific.net/JMNM.23.43

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Online since:

January 2005

Authors:

H.S. Mavi, S. Rath, Arun Shukla

Keywords:

Photoluminescence (PL), Raman Spectroscopy, Si Nanocrystal

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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