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Electrical Conductivity of SrRuO3 Thin Films Prepared by Laser Ablation

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Abstract:

SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and PO2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and PO2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

1209-1212

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1209

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Online since:

January 2005

Authors:

Akihiko Ito, Hiroshi Masumoto, Takashi Goto

Keywords:

Conductive Oxide, Electrical Properties, Epitaxial Growth, Laser Ablation, SrRuO3, Thin Film

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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