Paper Titles
Synthesis and Mechanical Properties of Conventionally Cast Icosahedral Particle-Reinforced Al-Mn(-Cu)-Be-Si Alloys
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The Electronic Characteristics of IrSi Thin Films
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Synthesis and Properties of GaN Nanostructures
p.3367
Upper-Bound Velocity Limit for Free-Jet Melt Spinning
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MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization
p.3377
Formation and Optimization of Cu-Based Cu-Zr-Al Bulk Metallic Glasses
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Crystallization Kinetics of Zr65Ni25Ti10 Metallic Glass Alloy
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Influence of Nb on the Interface Structure of Tungsten Fiber Reinforced Zr-Based Bulk Metallic Glass Composites
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Investigation of the Bulk Nd60-xDyxFe30Al10 (x=0, 2, 5) Amorphous Alloys
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MOCVD Growth and Annealing of Gallium Oxide Thin Film and Its Structural Characterization

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Abstract:

We have demonstrated the production of gallium oxide thin films on various substrates such as Si(111), SiO2, and sapphire by metalorganic chemical vapor deposition using the trimethylgallium (TMGa) as a precursor in the presence of oxygen. The XRD data revealed that the as-deposited gallium oxide films were fully amorphous but very small crystallites with monoclinic structures were found with the thermal annealing at a sufficiently high temperature, regardless of substrate materials. The AFM analysis indicated that the surface roughness increased by the thermal annealing.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

3377-3380

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.3377

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Online since:

January 2005

Authors:

Hyoun Woo Kim, Nam Ho Kim

Keywords:

Annealing, Gallium Oxide, MOCVD, Thin Film

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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