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Optical Properties of GaN on Si Substrate Using Plasma-Assisted MOCVD Technique in the Infrared and Visible Regions

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Abstract:

In this paper, we report the characteristics of GaN heteroepitaxial films grown on Si(111)at 700oC using plasma-assisted metalorganic chemical vapour deposition (PA-MOCVD). In this growth technique, H2 plasma was used in addition to N2 plasma. Two sets of samples with different buffer layers were used, i.e. GaN and AlN buffer layers. In the infrared region both samples exhibit similar reststrahlen band shape. However the sample with GaN buffer layer exhibits better optical properties in the visible region compared with its counterpart. This is attributed to its better structural bulk and surface properties.

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Periodical:

Materials Science Forum (Volumes 480-481)

Pages:

519-524

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.480-481.519

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Online since:

March 2005

Authors:

Md. Roslan Hashim, S.A. Oh, Sha Shiong Ng, Hassan Zainuriah, Kamarulazizi Ibrahim, M. Barmawi, Sugianto Sugianto, M. Budiman, P. Arifin

Keywords:

Buffer Layer, Gallium Nitride (GaN), Infrared, Plasma-Assisted MOCVD, Visible

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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