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Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy
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Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC
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Pressure Effect on the Elastic Properties of SiC Polytypes
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[01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
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XRDT Study of Structural Defects of 6H-SiC Crystals
p.311
Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
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PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
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Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
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Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
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XRDT Study of Structural Defects of 6H-SiC Crystals

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Abstract:

X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended structural defects in 6H-SiC bulky crystals. Topographs are taken by means of White Beam Synchrotron Radiation Source (WB-SRS-XRDT) and by means of monochromatic radiation (MoKα1) with conventional source (Lang method). All studied samples are characterised by the presence of linear defects, dislocations and microchannels, uniformly distributed in the crystal. Such defects draw a net of independent systems of parallel lines, with different orientation and different contrast widths. Micro-channels are parallel to the c axis, whereas dislocations are perpendicular or nearly parallel to the c axis. The last are unit screw dislocations. It has been concluded that the growth mechanism is driven by screw dislocations and that channels results from the coalescence of parallel dislocations.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

311-314

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.311

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Online since:

May 2005

Authors:

G. Agrosì, R.A. Fregola, A. Monno, Eugenio Scandale, G. Tempesta

Keywords:

6H-SiC, Crystal Growth, Dislocation, Micro-Channel, X-Ray Diffraction Topography

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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