Paper Titles
Fabrication of Silicon Nitride Nano-Ceramics by High-Energy Mechanical Milling and Spark Plasma Sintering
p.166
Microwave Sintering and Infiltration of Highly Porous Silicon Nitride Ceramics to Form Dense Ceramics
p.171
Reaction Bonded SiC Hot Gas Filter Using Si-Melt Infiltration Techniques
p.177
Fabrication and Strength Properties of LPS-SiC Ceramics
p.183
Effect of Carbon Black Addition on Reaction-Bonded Silicon Carbide Ceramics
p.189
Mechanical Properties of Synthesized Ti3SiC2 by Hot Pressing from TiC x/Si Powder Mixture
p.194
Characterization of the SiCf/SiC Composite Fabricated by the Whisker Growing Assisted CVI Process
p.200
Joining Method of Silicon Nitride to Carbon Steel
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Modification of Inner Pores with Silicon Carbide Whiskers onto the Al2O3 Substrate by CVI Process
p.212

Effect of Carbon Black Addition on Reaction-Bonded Silicon Carbide Ceramics

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Abstract:

High strength reaction-bonded silicon carbide ceramics was successfully produced by reducing the amount of residual silicon and the silicon pocket size with carbon black as an additional carbon source. A prototype of wafer carrier was also produced in near-net dimension by planar contact infiltration of molten silicon into a preform joined with six pieces of simple shape by eliminating process shrinkages. Forming shrinkages were decreased to a negligible level by compression molding, while sintering shrinkage was eliminated by reactive infiltration of molten silicon.

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Periodical:

Key Engineering Materials (Volume 287)

Pages:

189-193

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.287.189

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Online since:

June 2005

Authors:

Joo Sun Kim, H.W. Jun, Huesup Song, Jong Ho Lee, Hai Won Lee

Keywords:

Carbon Black (CB), Compression Molding, RBSC, Reactive Infiltration, Wafer Carrier

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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