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Electron Transport and Dielectric Breakdown Kinetics in Pr2O3 High K Films

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Abstract:

Praseodymium based dielectric thin films have been deposited by Metal-Organic Chemical Vapour Deposition (MOCVD). Special emphasis has been placed upon deposition parameters crucial to obtain Pr2O3 phase and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium containing films. The breakdown (BD) characteristics of Pr2O3 films have been investigated by an innovative and handling approach based on C-AFM. Moreover, the BD kinetics have been elucidated considering the role of defects in the conduction mechanisms.

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Periodical:

Advances in Science and Technology (Volume 46)

Pages:

21-26

DOI:

https://doi.org/10.4028/www.scientific.net/AST.46.21

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Online since:

October 2006

Authors:

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Salvatore Lombardo, Roberta G. Toro, Graziella Malandrino, Ignazio L. Fragalà

Keywords:

Electrical Characterisation, MOCVD, Praseodymium, Thin Film

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] S. Lombardo, J.H. Stathis, B.P. Linder, K.L. Pey, F. Palumbo, C.H. Tung; J Appl. Phys. 98, 121301 (2005).

Google Scholar

[2] R. Lo Nigro, R. G. Toro, G. Malandrino, V. Raineri, I. L. Fragala, Adv. Mater. 15, 1071 (2003).

Google Scholar

[3] P. Fiorenza, R. Lo Nigro, V. Raineri, S. Lombardo, R. G. Toro, G. Malandrino, I.L. Fragalà, J. Appl. Phys, 98, 44312 (2005).

DOI: 10.1063/1.2140883

Google Scholar

[4] H. J. Osten, J. P. Liu, H. J. Mussig, Appl. Phys. Lett. 80, 297 (2002).

Google Scholar

[5] P. Fiorenza, R. Lo Nigro, V. Raineri, S. Lombardo, R. G. Toro, G. Malandrino, I.L. Fragalà, Appl. Phys, Lett. 87, 231913 (2005).

DOI: 10.1063/1.2140883

Google Scholar

[6] R. Lo Nigro, R.G. Toro, G. Malandrino, I.L. Fragalà; J. Electrochem. Soc. 151, F206 (2004).

Google Scholar

[7] R. Lo Nigro, R.G. Toro, G. Malandrino, G. G. Condorelli, V. Raineri, I.L. Fragalà; Avd. Funct. Mater. 15, 838 (2005).

Google Scholar

[8] R. Lo Nigro, G. Malandrino, R. G. Toro, I. L. Fragalà; Chem Vap. Dep. 12, 109 (2006).

Google Scholar

[9] P. Riess, G. Ghibaudo, G. Pananakis, J. Brini, G. Ghidini; J. Non-Cryst. Solids 245, 48 (1999).

Google Scholar

[10] M. Nafria, J. Surie, X. Aymerich; J. Appl. Phys. 73, 205 (1993).

Google Scholar

[11] H. Depas, T. Nigam, M.M. Heyns; IEEE Trans. Electron. Dev. 43, 1499 (1996).

Google Scholar

[12] X.N. Xie, H. J. Chung, C.H. Sow, A.T.S. Wee; Appl. Phys. Lett. 86, 023112 (2005).

Google Scholar

[13] R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, H.E. Maes; IEDM Tech. Dig. 863 (1995).

Google Scholar

[14] J. H. Stathis; J. Appl. Phys. 86, 5757 (1999).

Google Scholar

[15] T. Kauerauf, R. Degraeve, E. Cartier, C. Soens, G. Groeseneken; IEEE Electron Dev. Lett. 23 215 (2002).

DOI: 10.1109/55.992843

Google Scholar